2016. 03. 31 1/2 semiconductor technical data PG05ESEL2 single line tvs diode for esd protection in portable electronics revision no : 1 protection in portable electronics applications. features h 50 watts peak pulse power (tp=8/20 s) h transient protection for data lines to iec 61000-4-2(esd) 20kv(air), 15kv(contact) iec 61000-4-5(lightning) 5a(tp=8/20 s) h small package for use in portable electronics. h suitable replacement for multi-layer varistors in esd protection applications. h protects on i/o or power line. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. hpersonal digital assistants (pda' s) h notebooks, desktops, & servers. h portable instrumentation. h pagers peripherals. maximum rating (ta=25 ? ) 1. anode 2. cathcde elp-2 b f f a i j dim millimeters a b c c d d e 2 1 2 1 e h h typ 0.36 typ 0.1 max 0.3 g j i g g 0.6 0.05 + _ 0.3 0.05 + _ 0.2 0.05 + _ 0.25 0.05 + _ 0.025 0.02 + _ 0.18 0.05 + _ 0.28 0.05 + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 50 w esd per iec-61000-4-2 (air) v esd(air) 20 kv esd per iec-61000-4-2 (contact) v esd(contact) 15 kv peak pulse current (tp=8/20 s) i pp 5 a junction temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? marking k 21 21 cathode mark characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 6 - - v reverse leakage current i r v rwm =5v - - 5 a clamping voltage v c i pp =5a, tp=8/20 s - - 10 v total capacitance c t v r =0v, f=1mhz - 35 50 pf
2016. 03. 31 2/2 PG05ESEL2 revision no : 1
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